vishay imbd4448 document number 85732 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 1 12 3 16923 small signal switching diode features ? silicon epitaxial planar diodes fast switching diode in case sot-23, especially suited for automatic insertion. this diodes are also available in other case styles including: the do-35 case with the type designation 1n4448, the mini-melf case with the type designation ll4448, and the sod-123 case with the type designation 1n4448w. mechanical data case: sot-23 plastic case weight: approx. 8.8 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout (sot-23). thermal characteristics t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout (sot-23). part ordering code marking remarks imbd4448 IMBD4448-GS18 or imbd4448-gs08 a3 tape and reel parameter test condition symbol value unit reverse voltage v r 75 v peak reverse voltage v rm 100 v rectified current (average) half wave rectification with resist. t amb = 25 c and f 50 hz i f(av) 150 1) ma surge forward current t < 1 s and t j = 25 c i fsm 500 ma power dissipation t amb = 25 c p tot 350 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 450 1) c/w junction temperature t j 150 c storage temperature range t s - 65 to + 150 c
www.vishay.com 2 document number 85732 rev. 1.4, 08-jul-04 vishay imbd4448 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified layout for r thja test thickness: fiberglass 1.5 mm (0.059 in.) copper leads 0.3 mm (0.012 in.) typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit forward voltage i f = 5 ma v f 0.62 0.72 v i f = 100 ma v f 1.0 v leakage current v r = 70 v i r 2.5 a v r = 70 v, t j = 150 c i r 50 a v r = 25 v, t j = 150 c i r 30 a diode capacitance v f = v r = 0 c tot 4pf reverse recovery time (see figures) i f = 10 ma, i r = 10 ma, v r = 6 v, r l = 100 ? t rr 4ns 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) figure 1. forward current vs. forward voltage 18689 1000 100 10 1 0.1 0.01 i - forward current ( ma ) f 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.2 v - forward voltag e(v) = 100 c t j 25 c f fgure 2.namforwardetane.forwardcurrent 18662 1 10 100 1000 10000 r - dynamic forward resistance ( ) f ? 110 0.1 0.01 100 i f - forward current ( ma ) =25 c t j f=1khz
vishay imbd4448 document number 85732 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 3 figure 3. admissible power dissipation vs. ambient temperature 200 18663 t amb - ambient t emperature ( c) 1000 800 600 400 200 20 40 60 80 100 120 140 160 180 0 p - admissible power dissipation ( mw ) tot 0 iure 4elatiecapaitaneseerseoltae 18664 2468 0 1.1 1.0 0.9 0.8 0.7 10 c - relative capacitance ( pf ) tot v r - reverse voltag e(v) =25 c t j f=1mhz /t t = 1/f =t pp i frm t p t t i =0 0.1 0.2 0.5 10 10 1 -1 100 10 1 -5 10 10 -4 10 -3 10 -2 18709 i - admissible repetitive frm peak forward curren t(a) t p - pulse length ( s ) figure 5.admissiblerepetitivepeakforwardcurrentvs.pulseuration
www.vishay.com 4 document number 85732 rev. 1.4, 08-jul-04 vishay imbd4448 vishay semiconductors package dimensions in mm (inches) 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
vishay imbd4448 document number 85732 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
|
